Tungstène, cible sputtering , diamètre x épaisseur 2,00 po x 0,25 po, base des métaux traces 99,95 %

Code: 767522-1ea D2-231

Non disponible en dehors du Royaume-Uni et de l'Irlande

Application

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturizatio...


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$631.69 EACH
DEMANDER

Non disponible en dehors du Royaume-Uni et de l'Irlande

Application

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition.

Packaging

1 ea in rigid mailer

assay99.95% trace metals basis
bp5660 °C (lit.)
density19.3 g/mL at 25 °C (lit.)
diam. × thickness2.00 in. × 0.25 in.
formpieces
InChI keyWFKWXMTUELFFGS-UHFFFAOYSA-N
InChI1S/W
mp3410 °C (lit.)
Quality Level100
reaction suitabilitycore: tungsten
resistivity4.9 µΩ-cm, 20°C
SMILES string[W]
Cas Number7440-33-7
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