Tantale, cible sputtering, diamètre x épaisseur 2,00 po x 0,25 po, base de métaux traces 99,95 %

Code: 767514-1ea D2-231

Non disponible en dehors du Royaume-Uni et de l'Irlande

Application

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturizatio...


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Votre prix
£659.00 EACH
DEMANDER

Non disponible en dehors du Royaume-Uni et de l'Irlande

Application

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition.

Packaging

1 ea in rigid mailer

assay99.95% trace metals basis
autoignition temp.572 °F
bp5425 °C (lit.)
density16.69 g/cm3 (lit.)
diam. × thickness2.00 in. × 0.25 in.
formfoil
InChI keyGUVRBAGPIYLISA-UHFFFAOYSA-N
InChI1S/Ta
mp2996 °C (lit.)
Quality Level100
reaction suitabilitycore: tantalum
resistivity13.5 µΩ-cm, 20°C
SMILES string[Ta]
vapor pressure﹤0.01 mmHg ( 537.2 °C)
Cas Number7440-25-7
Ce produit répond aux critères suivants: