Non disponible en dehors du Royaume-Uni et de l'Irlande

Application

Precursors Packaged for Depositions Systems

Advanced precursor for atomic layer deposition of ZrO₂ thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO₂ and ZrO₂ films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

Features and Benefits

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

General description

Atomic number of base material: 40 Zirconium

Packaging

10 g in stainless steel cylinder

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.