2,4,6,8 - tétraméthylcyclotetrasiloxane,;, >=99,5%, > = 99,999 % base de métaux traces

Code: 512990-100ml D2-231

Non disponible en dehors du Royaume-Uni et de l'Irlande

Features and Benefits

Precursor for gate dielectrics in thin-film transistors (TFT), and is a component of photochemically formed SiO_X monolayers on TiO.

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Votre prix

$591.60 100ML

DEMANDER

Non disponible en dehors du Royaume-Uni et de l'Irlande

Features and Benefits

Precursor for gate dielectrics in thin-film transistors (TFT), and is a component of photochemically formed SiO_X monolayers on TiO.

General description

Atomic number of base material: 14 Silicon

Packaging

25, 100 mL in glass bottle

assay	≥99.999% trace metals basis, ≥98.5%
bp	134 °C (lit.)
density	0.986 g/mL at 25 °C (lit.)
form	liquid
InChI key	BQYPERTZJDZBIR-UHFFFAOYSA-N
InChI	1S/C4H16O4Si4/c1-9-5-10(2)7-12(4)8-11(3)6-9/h9-12H,1-4H3
mp	−69 °C (lit.)
Quality Level	100
refractive index	n20/D 1.387 (lit.)
SMILES string	C[SiH]1O[SiH](C)O[SiH](C)O[SiH](C)O1
storage temp.	2-8°C

Code

Description

Unité de vente

Prix annoncé

Qté

512990-25ML

Unité:25ML

Prix annoncé: $381.35

Source:Prix annoncé

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