Non disponible en dehors du Royaume-Uni et de l'Irlande
Application
Selective etchants for tungsten thin-film metallizations used in semiconductor and microelectronics technology. Etchants are buffered, mildly alkaline ferricyanide-based formulations providing high resolution patterns with minimal undercutting and photoresist compatibility. Etchant is ready to use (no dilution required). Controlled, uniform etching is achieved by immersion or spray etch technique. Etch Capacity (rate declines at ~70%) of 64 g/gallon. Recommended Operating Temperatures: 20-80 °C (30-40 °C most common).
General description
Tungsten etchant is a mixture of potassium hydroxide and potassium ferricyanide based solution that facilitates the removal of tungsten and other materials like aluminium by dipping the substrate into the etching solution.
Packaging
500 mL in poly bottle
Preparation Note
1. Select your etching method according to the table below
Etch Rate (Immersion) Etch Rate (Spray) 20°C = 30 Å/second 30°C = 140 Å/second 20°C = 80 Å/second 60°C = 250 Å/second
Ce produit répond aux critères suivants: