Dioxyde de silicium, substrat à simple cristal, qualité optique, 99,99 % base métallique trace, +lt; 0001 >, L x l x épaisseur 10 mm x 10 mm x 0,5 mm

Code: 634867-5ea D2-231

Non disponible en dehors du Royaume-Uni et de l'Irlande

Application

SiO2 is majorly used as a substrate material with excellent thermo-mechanical properties in a variety of applications which include:vapour depositionph...


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Votre prix
£191.00 PK5

Non disponible en dehors du Royaume-Uni et de l'Irlande

Application

SiO2 is majorly used as a substrate material with excellent thermo-mechanical properties in a variety of applications which include:vapour depositionphase depositionatomic force microscopy probes(AFM)spin coatingelectronic based devices

Features and Benefits

An excellent substrate for microwave filters for applications in the wireless communication arena.

Other Notes

specific heat = 0.18 cal/g; thermoelectric constant = 1200µV/°C @ 300 °C; thermal conductivity = 0.0033 cal/cm°C; themal expansion (x10-6) = α11: 13.71, α33: 7.48; Q value = 1.8 × 106 min; acoustic velocity, SAW = 3160 m/sec; frequency constant, BAW = 1661 kHz/mm; piezoelectric coupling = K2 BAW: 0.65%, SAW: 0.14%

Packaging

5 ea in padded box

Physical form

Crystalline, hexagonal (a = 4.914 Å, c = 5.405 Å)

assay99.99% trace metals basis
density2.684 g/mL, 2.6 g/mL at 25 °C (lit.)
formsolid
gradeoptical grade
hardness7.0 mohs
InChI keyVYPSYNLAJGMNEJ-UHFFFAOYSA-N
InChI1S/O2Si/c1-3-2
L × W × thickness10 mm × 10 mm × 0.5 mm
mp1610 °C (lit.)
Quality Level100
refractive indexn20/D 1.544 (lit.)
SMILES stringO=[Si]=O
transition tempTm 573.1 °C (phase change)
Cas Number60676-86-0
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