Arsenide de Gallium, (substrat à simple cristal), +lt; 100 >, diamètre x Épaisseur 2 po x 0,5 mm

Code: 651486-1ea D2-231

Packaging

1 ea in rigid mailer

Physical form

cubic (a = 5.6533 Å)

Physical properties

Undoped (Si-type semiconductor...

AJOUTER

Votre prix

$769.92 EACH

DEMANDER

Packaging

1 ea in rigid mailer

Physical form

cubic (a = 5.6533 Å)

Physical properties

Undoped (Si-type semiconductor), EPD ﹤ 5 × 10⁴ cm-2, growth technique = LEC & HB

Mobility >=4500 cm² · V^-1 · S^-1

density	5.31 g/mL at 25 °C (lit.)
diam. × thickness	2 in. × 0.5 mm
form	(single crystal substrate)
InChI key	JBRZTFJDHDCESZ-UHFFFAOYSA-N
InChI	1S/As.Ga
Quality Level	100
resistivity	≥1E7 Ω-cm
semiconductor properties	﹤100﹥
SMILES string	[Ga]#[As]

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