Non disponible en dehors du Royaume-Uni et de l'Irlande

Application

Buffered oxide etchant (BOE) 6:1 can be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It can be used in a buffer oxide etchant method for the fabrication of micro biochip.

General description

BOE 6:1 is 6 parts by volume 40% ammonium fluoride and 1 part by volume 49% HF.

Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO₂) or silicon nitride (Si₃N₄). It is a mixture of a buffering agent, such as ammonium fluoride (NH₄F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.