Not available outside of the UK & Ireland.

Application

Niobium ethoxide is an important precursor for depositing thin films of niobium oxide and other thin films doped with niobium. Because of its low boiling point and low decomposition temperature (~325-350 °C), niobium(V) ethoxide is used as a precursor in atomic-layer deposition (ALD), chemical vapor deposition (CVD), and metal-organic chemical vapor deposition (MOCVD) of niobium oxides.

Features and Benefits

Niobium(V)ethoxide packaged for use in deposition systems is packaged in a Swagelokstainless-steel deposition system convenient for connecting to ALD, CVD, andMOCVD systems. Steel cylinder connected to 316stainless steel ball-valve 1/4 inch male Swagelok VCRconnections

General description

Niobium(V) ethoxide is a colorless liquid that is miscible with some organic solvents, but which hydrolyzes readily. Niobium(V) ethoxide boils at 142 °C at 0.1 mmHg.

Packaging

10 g in stainless steel cylinder