Gallium phosphide, (single crystal substrate), <111>, diam. x thickness 2 in. x 0.5 mm

Code: 651494-1ea D2-231

Not available outside of the UK & Ireland.

Packaging

1 ea in rigid mailer

Physical form

cubic (a = 5.4505Å)

Physical properties

Thermal expansion: 5.3 x 10

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£654.00 EACH
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Not available outside of the UK & Ireland.

Packaging

1 ea in rigid mailer

Physical form

cubic (a = 5.4505Å)

Physical properties

Thermal expansion: 5.3 x 10-6/°C

Undoped (N-type semiconductor), carrier concentration = 2-6 × 1016 cm-3, EPD ﹤ 3 × 105 cm-2, growth technique = LEC

density4.13 g/mL at 25 °C
diam. × thickness2 in. × 0.5 mm
form(single crystal substrate)
InChI keyHZXMRANICFIONG-UHFFFAOYSA-N
InChI1S/Ga.P
mp1480 °C
Quality Level100
resistivity~0.3 Ω-cm
semiconductor properties﹤111﹥
SMILES string[P]#[Ga]
Cas Number12063-98-8
This product has met the following criteria: