Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. x thickness 3 in. x 0.5 mm

Code: 647802-1ea D2-231

Not available outside of the UK & Ireland.

Packaging

1 ea in rigid mailer

Physical properties

Oxygen content: ﹤= 1~1.8 x 1018 /cm3; Carbon content: ﹤= 5...


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Not available outside of the UK & Ireland.

Packaging

1 ea in rigid mailer

Physical properties

Oxygen content: ﹤= 1~1.8 x 1018 /cm3; Carbon content: ﹤= 5 x 1016 /cm3; Boule diameter: 1~8 ″

0 vortex defects. Etch pitch density (EPD) ﹤ 100 (cm-2). Resistivity 10-1 Ωcm

bp2355 °C (lit.)
containsphosphorus as dopant
density2.33 g/mL at 25 °C (lit.)
diam. × thickness3 in. × 0.5 mm
formwafer (single side polished), crystalline (cubic (a = 5.4037))
InChI keyXUIMIQQOPSSXEZ-UHFFFAOYSA-N
InChI1S/Si
mp1240 °C, 1410 °C (lit.)
Quality Level100
semiconductor properties﹤100﹥, N-type
SMILES string[Si]
Cas Number7440-21-3
This product has met the following criteria: