Silicon, wafer (single side polished), <111>, N-type, contains No dopant, diam. x thickness 2 in. x 0.5 mm

Code: 647101-5ea D2-231

Not available outside of the UK & Ireland.

Packaging

1 ea in padded box

5 ea in rigid mailer

Physical properties

0 vortex defects. Etch pitch density (EPD) ﹤ 100 (cm^-2

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$572.21 PK5

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Not available outside of the UK & Ireland.

Packaging

1 ea in padded box

5 ea in rigid mailer

Physical properties

0 vortex defects. Etch pitch density (EPD) ﹤ 100 (cm^-2). Resistivity 100 - 3000 Ωcm.

Oxygen content: ≤ 1~1.8 x 10¹⁸ /cm³; Carbon content: ≤ 5 x 10¹⁶ /cm³; Boule diameter: 1~8 ″

bp	2355 °C (lit.)
density	2.33 g/mL at 25 °C (lit.)
diam. × thickness	2 in. × 0.5 mm
does not contain	dopant
form	wafer (single side polished), crystalline (cubic (a = 5.4037))
InChI key	XUIMIQQOPSSXEZ-UHFFFAOYSA-N
InChI	1S/Si
mp	1410 °C (lit.)
Quality Level	100
semiconductor properties	﹤111﹥, N-type
SMILES string	[Si]

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Description

Unit Size

List Price

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647101-1EA

Unit:EACH

List Price: $173.59

Source:List Price

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Cas Number

7440-21-3

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