Silicon, wafer (single side polished), <100>, N-type, contains No dopant, diam. x thickness 2 in. x 0.5 mm

Code: 646687-1ea D2-231

Not available outside of the UK & Ireland.

General description

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a subst...


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£141.00 EACH

Not available outside of the UK & Ireland.

General description

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Packaging

1, 5 ea in rigid mailer

Physical properties

0 vortex defects. Etch pitch density (EPD) ﹤ 100 (cm-2). Resistivity 100 - 3000 Ωcm

Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

bp2355 °C (lit.)
density2.33 g/mL at 25 °C (lit.)
diam. × thickness2 in. × 0.5 mm
does not containdopant
formwafer (single side polished), crystalline (cubic (a = 5.4037))
InChI keyXUIMIQQOPSSXEZ-UHFFFAOYSA-N
InChI1S/Si
mp1410 °C (lit.)
Quality Level100
semiconductor properties﹤100﹥, N-type
SMILES string[Si]
Code
Description
Unit Size
List Price
Qty
Cas Number7440-21-3
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