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General description

Graphene preparation method: electrochemical exfoliation. Graphene thickness by AFM: ~80% 1-3 layers. Sheet size by AFM: 5-10 µm. Oxygen content: 5.5 at.% (C/O-ratio: 17.2). Raman I_D/I_G ratio: 0.25. Sheet resistance: 2 kΩ/sq. Typical properties of films produced thereof (after dilution to 0.1 mg/mL and dry transfer from PTFE-filter):6 nm film: 91% transmittance, sheet resistance of 24.2 kΩ/sq (as made), 7.9 kΩ/sq (after 30 min, 200 °C), ﹤1 kΩ/sq (conc. HNO₃-treatment).16 nm film: 73% transmittance, sheet resistance of 7.6 kΩ/sq (as made), 1.8 kΩ/sq (after 30 min, 200 °C), ﹤500 Ω/sq (conc. HNO₃-treatment).